Improved Electrical Characteristics of Al_2O_3/InP Structure by Combination of Sulfur Passivation and Forming Gas Annealing
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概要
- 論文の詳細を見る
The capacitance-voltage (C-V) characteristics of a Al_2O_3/InP capacitor fabricated by helicon-wave excited O_2-Ar plasma oxidation of vacuum-evaporated Al were significantly improved by a combination of sulfur passivation of the InP substrate in (NH_4)_2S_x (for 60 min) and post-thermal annealing in forming gas (FG) containing 5% H_2 (at 350℃) of the grown films after plasma oxidation. X-ray photoelectron spectroscopic (XPS) data indicated the formation of In-S bonds and suppression of InP oxidation after the sulfur passivation. The reason for the improved C-V characteristics is briefly discussed as being due to the termination of the incomplete or dangling bonds by sulfur and hydrogen.
- 社団法人応用物理学会の論文
- 1999-12-15
著者
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Ikoma Hideaki
Faculty Of Science And Technology Science University Of Tokyo
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Motegi T
Faculty Of Science And Technology Science University Of Tokyo
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MORIKITA Shinya
Faculty of Science and Technology, Science University of Tokyo
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MOTEGI Tomoyuki
Faculty of Science and Technology, Science University of Tokyo
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Motegi Tomoyuki
Faculty Of Science And Technology Science University Of Tokyo
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Morikita Shinya
Faculty Of Science And Technology Science University Of Tokyo
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