Silicon Oxynitridation with Inductively Coupled Oxygen-Nitrogen Mixed Plasma

概要

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Oxynitridation of Si was performed using an inductively coupled nitrogen and oxygen mixed plasma with and without substrate heating up to 300℃. Fairly good capacitance-voltage characteristics were obtained for the film grown with an O_2 flow-rate ratio of 80% (O_2:N_2=8:2) with substrate heating at 200-300℃ and post-thermal annealing at 500℃ for 30 min in an oxygen ambient. The current-voltage characteristics showed that the Fowler-Nordheim tunneling current was the main leakage current mechanism and the barrier height was estimated to be about 2.02-2.14 eV with an effective electron mass of 0.42-0.5 m_0 (m_0: free electron mass). X-ray photoelectron spectroscopic measurements showed that the Si oxide (including Si suboxide) and Si oxynitride (Si_2N_2O)/Si nitride (Si_3N_4) were formed, respectively, at or near the top surface, and at the interface of the grown film and Si substrate, i.e., So oxide/Si oxynitride-nitride mixture/Si layered structures were always obtained. The growth kinetics were also speculated on.
社団法人応用物理学会の論文
1997-02-15