Magnetically Excited Plasma Oxynitridation of Si at Room Temperature
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概要
- 論文の詳細を見る
Good electrical quality Si oxynitride was successfully grown at room temperature using magnetically excited (N_2+Ar) plasma. Si oxynitride, probably Si_2N_2O, was grown only when Ar was mixed with N_2, while SiO_2 was solely formed with N_2 only. At the top surface of the grown film with mixed gas, SiO_2 was always grown due to residual oxygen in N_2 gas, so that the SiO_2/Si_2N_2O structure was always obtained. Good capacitance-voltage characteristics were obtained although the growth rate was somewhat low. The (N_2+Ar) plasma treatment after deposition of Si_3N_4 powder on Si was also discussed.
- 社団法人応用物理学会の論文
- 1995-08-01
著者
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Ikoma Hideaki
Faculty Of Science And Technology Science University Of Tokyo
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OKAMOTO Yoshinaga
Faculty of Science and Technology, Science University of Tokyo
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NAGASAWA Hideaki
Faculty of Science and Technology, Science University of Tokyo
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KITAJIMA Hiroyasu
Faculty of Science and Technology, Science University of Tokyo
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KITAYAMA Daiske
Faculty of Science and Technology, Science University of Tokyo
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