GaN-Passivation of GaAs with Less Plasma Damages : Effects of Input Plasma Power, Substrate Heating and Post-Thermal Annealing
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2000-04-15
著者
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Ikoma Hideaki
Faculty Of Science And Technology Science University Of Tokyo
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Kanazawa Keisuke
Faculty Of Science And Technology Science University Of Tokyo
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TANEMURA Hidetoshi
Faculty of Science and Technology, Science University of Tokyo
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Tanemura Hidetoshi
Faculty Of Science And Technology Science University Of Tokyo
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