Possible Existence of a Surplus (Oxygen-Excess) Ga Oxide in the Thermal Oxide of GaAs
スポンサーリンク
概要
- 論文の詳細を見る
With the use of X-ray photoelectron spectroscopy (XPS), a surplus (oxygen-excess) Ga oxide was observed in the thermal oxides of GaAs grown at temperatures between 400℃ and 550℃ in dry oxygen. The surplus oxides are probably GaO_2. A possible mechanism of formation of such an excess oxide is briefly discussed. Advanced Ga oxides such as Ga_2O_3 and GaO_2 begin to desorb and evaporate from the surface during oxidation at 550℃ for 10 min. Ga suboxides such as GaO and Ga_2O showed no evidence of desorption or evaporation. No surplus (oxygen-excess) oxide of As was observed.
- 社団法人応用物理学会の論文
- 1993-04-15
著者
-
Ikoma Hideaki
Faculty Of Science And Technology Science University Of Tokyo
-
ISHIKAWA Toshifumi
Faculty of Science and Technology, Science University of Tokyo
-
Ishikawa Toshifumi
Faculty Of Science And Technology Science University Of Tokyo
関連論文
- Selenium Passivation of GaAs with Se/NH_4OH Solution
- X-Ray Photoelectron Spectroscopic Study of Oxidation of InP II: Thermal Oxides Grown at High Temperatures
- Effects of Surface Orientation and Molar Ratio of (Sr_xCa_y)F_2 Films on Electrical Characteristics of Metal /Fluoride/GaAs Structures
- Effect of Molar Ratio of (Ca_xBa_y)F_2 Films on Electrical Characteristics of Metal/Fluoride/InP Structures
- Effect of Post-Thermal Annealing on the Various Sulfur Passivations of GaAs
- Antimony Passivation of InP
- Si Oxynitridation with Helicon-Wave Excited Nitrogen Plasma:Effects of Plasma Divergence and Concentration on Substrates
- Oxynitridation of Silicon Using Helicon-Wave Excited and Inductively-Coupled Nitrogen Plasma
- Internal Photoemission and X-Ray Photoelectron Speetroseopic Studies of Sulfur-Passivated GaAs
- X-Ray Photoelectron Spectroscopy and Electrical Characteristics of Na_2S-Passivated GaAs Surface : Comparison with (NH_4)_2S_x-Passivation
- Helicon-Wave-Excited Plasma Nitridation of GaAs After Short-Time Plasma Oxidation for Fabrication of Damage-Free GaN/GaAs Interface
- Growth of "Oxide-Less" GaN Layer by Helicon-Wave Excited N_2-Ar Plasma Treatment of Al/GaAs Structure
- Effects of Gas-Flow-Rate Ratio on Electrical Characteristics and Fowler-Nordheim Stress Resistance of Si Oxynitride Grown with Helicon-Wave-Excited N_2-Ar plasma
- Magnetically Excited Plasma Oxidation of InP : Effects of Ar Mixing and Substrate Heating
- Magnetically Excited Plasma Oxidation of InP
- X-Ray Photoelectron Spectroscopic Study of Oxidation of InP
- Analysis of Si Schottky Barrier Characteristics Based on a New Interfacial Layer Model
- Electrical Characteristics and Surface Chemistry of P_2S_5-Passivated GaAs
- Helicon-Wave-Excited Plasma Treatment of SiO_x Films Evaporated on Si Substrate
- Magnetically Excited Plasma Oxidation of Si
- Low-Temperature Si Oxidation Using Inductively Coupled Oxygen-Argon Mixed Plasma
- GaN-Passivation of GaAs with Less Plasma Damages : Effects of Input Plasma Power, Substrate Heating and Post-Thermal Annealing
- Effects of Postannealing of Electrical Characteristics and Fowler-Nordheim Current Stress Resistance of Si Oxynitride Grown in Helicon-Wave-Excited O_2-N_2-Ar Plasma
- Silicon Oxynitridation with Inductively Coupled Oxygen-Nitrogen Mixed Plasma
- Magnetically Excited Plasma Oxidation of GaAs
- Improved Electrical Characteristics of Al_2O_3/InP Structure by Combination of Sulfur Passivation and Forming Gas Annealing
- Al_2O_3/InP Structure with Less Oxides of InP Fabricated by Helicon-Wave Exicited O_2-Ar Plasma Treatment of Al/InP
- Possible Existence of a Surplus (Oxygen-Excess) Ga Oxide in the Thermal Oxide of GaAs
- Sb and Bi Passivation Effects on GaAs : Semiconductors
- X-Ray Photoelectron Spectroscopic Analysis of the Oxide of GaAs
- Low-Temperature Growth of Si Oxide with Good Electrical Qualities Using Helicon-Wave-Excited O_2-Ar Plasma and Forming Gas Annealing
- Oxidation of GaAs Using Helicon-Wave Excited Nitrogen-Oxygen-Argon Plasma
- Effect of Surface Treatments after HF Etching on Oxidation of Si
- Magnetically Excited Plasma Oxynitridation of Si at Room Temperature