Effects of Postannealing of Electrical Characteristics and Fowler-Nordheim Current Stress Resistance of Si Oxynitride Grown in Helicon-Wave-Excited O_2-N_2-Ar Plasma

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The effects of post-thermal annealing in N_2 and/or forming gas(FG)on the electrical characteristics and Fowler-Nordheim(FN)current stress resistance were investigated for Si oxynitride grown in helicon-wave excited O_2-N_2-Ar plasma. The X-ray photoelectron spectroscopic data indicated growth of the Si oxynitride. The capacitance-voltage characteristics were measured to evaluate the electrical qualities of the grown Si oxynitride. The minimum interface state density D_it, min had the smallest value when the Si oxynitride sample was post-thermally annealed in FG(3% H_2)at 300℃ followed by annealing in N_2 at 700℃. However, D_it, min was approximately 3.5 × 10^11 eV^-1cm^-2, still higher than that for thermal Si oxide. The shift of the threshold voltage(V_th)after the stressing(±10V, 100min)was also the smallest for the Si oxynitride sample continuously annealed in FG(3% H_2)and N_2. The FG annealing does not necessarily improve the electrical characteristics and FN stress resistance. The N_2 annealing after FG annealing is required to improve the electrical properties and FN reliability, in contrast with the case of Si oxide.
社団法人応用物理学会の論文
2000-03-15