Oxidation of GaAs Using Helicon-Wave Excited Nitrogen-Oxygen-Argon Plasma
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概要
- 論文の詳細を見る
GaAs (100) substrates were exposed to the helicon-wave excited N_2-O_2-Ar plasma without and with substrate heating at 200℃. The oxide dominantly composed of Ga_2O_3 and As_2O_3, was grown on the GaAs substrate using this technique. The chemical composition of this oxide was highly uniform along the thickness of the oxide film. Relatively good capacitance-voltage (C-V) characteristics were obtained. X-ray photoelectron spectroscopic data indicated that gallium nitride (GaN) bonds were formed at the oxide/GaAs interface only with both substrate heating and post-thermal annealing at 200℃ for 30 min in a nitrogen ambient. The formation of the GaN/GaAs interface improved the C-V characteristics to some extent.
- 社団法人応用物理学会の論文
- 1998-04-15
著者
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Ikoma Hideaki
Faculty Of Science And Technology Science University Of Tokyo
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Wada Satoshi
Faculty Of Fisheries Hokkaido University
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Hara Akio
Faculty Of Science And Technology Science University Of Tokyo
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Kasahara Fumio
Faculty Of Science And Technology Science University Of Tokyo
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WADA Satoshi
Faculty of Science and Technology, Science University of Tokyo
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HARA Akio
Faculty of Science and Technology, Science University of Tokyo
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