Low-Temperature Growth of Si Oxide with Good Electrical Qualities Using Helicon-Wave-Excited O_2-Ar Plasma and Forming Gas Annealing
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概要
- 論文の詳細を見る
- 2000-01-15
著者
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Ikoma Hideaki
Faculty Of Science And Technology Science University Of Tokyo
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Tsukuda Tatsuaki
Faculty Of Science And Technology Science University Of Tokyo
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