Effects of Gas-Flow-Rate Ratio on Electrical Characteristics and Fowler-Nordheim Stress Resistance of Si Oxynitride Grown with Helicon-Wave-Excited N_2-Ar plasma

概要

論文の詳細を見る
The effects of the gas-flow-rate ratio on the electrical characteristics and the Fowler-Nordheim(FN)current stress resistance were investigated for Si oxynitride grown with helicon-wave excited(HWP)N_2-Ar plasma. The flow-rate ratio of N_2[N_2/(N_2+Ar)]was varied from 100%(N_2 only)to 60%. The X-ray photoelectron spectroscopic data(XPS)indicated that uniform Si oxynitride(probably Si_2N_2O)was formed through the entire film thickness when the N_2 gas-flow-rate ratio was 100%(N_2 only), though a small amount of Si suboxide was included. The capacitance-voltage(C-V)measurements revealed that the interface-state density was the lowest in this flow-rate ratio case, as the grown layer was postannealed at moderate temperatures(300-500℃). Fowler-Nordheim current injection was performed using the metal/Si-oxynitride/Si capacitors thus fabricated. The shift of the threshold voltage was the lowest for the sample grown without Ar mixing. It was smaller than that for the thermal Si oxide(SiO_2)grown at 900℃.The results of FN current stress resistance experiments were explained in terms of the surface plasmon and avalanche breakdown models.
社団法人応用物理学会の論文
2000-03-15