Properties and Time Dependences of Silicon Oxynitride Films Deposited by Low-Temperature Photochemical Vapor Deposition
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Silicon oxynitride films (SiN_xO_y) were deposited using mercury-sensitized photochemical vapor deposition. The photochemical vapor deposition (photo-CVD) SiN_xO_y film was used as an antireflective coating (ARC) for a single-crystal Si solar cell. It was found that the refractive index of SiN_xO_y film deposited at low temperatures showed maked time dependence.
- 社団法人応用物理学会の論文
- 1995-08-15
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