Improvement of Solar Cell Performance Using Plasma-Deposited Silicon Nitride Films with Variable Refractive Indices : Condensed matter

概要

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Silicon nitride films containing various amounts of Si or O atoms were prepared by controlling the operation parameters of the plasma-chemical vapor deposition in N_2-diluted silane mixed with H_2-diluted silane or with O_2 under various mixing ratios. By this method, the refractive indices of silicon nitride films could be varied over a wide range. The refactive index of films containing oxygen atoms gradually changed through oxygenation; however, oxygen-free plasma-deposited silicon nitride (P-SiN) films containing various amounts of Si atoms were very stable. The spectral response of the reflectance was measured for the latter Si-rich P-SiN films in order to determine the appropriate conditions as antireflective coatings for P/N single crystal Si solar cells. As a result, Si-rich P-SiN antireflective films improved the conversion efficiency of Si solar cells by 40 to 50 or by 50 to 70%, depending on whether a single-layer or double-layer coating, respectively, was used.
社団法人応用物理学会の論文
1988-04-20