Plasma-Chemical Vapor-Deposited Silicon Oxide/Silicon Oxynitride Double-Layer Antireflective Coating for Solar Cells
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概要
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Si-oxide/Si-oxynitride (SiO_X/SiN_XO_Y) double-layer films were prepared by controlling the operation parameters of plasma chemical vapor deposition in N_2-diluted silane mixed with H_2-diluted silane or with O_2 under various mixing ratios. The compositions of the layers of the films were measured with electron spectroscopy for chemical analysis (ESCA) along the depth from the film surface by Ar-ion etching. The results have revealed that O-atoms diffuse into and N-atoms diffuse out of the SiN_XO_Y layer during SiO_X layer deposition. By making use of the relation between the refractive index and atomic ratio Si/O or O/N for SiN_XO_Y films, the gradual changes of the refractive index in the SiO_X/SiN_XO_Y interfacial (or transition) region has been determined. As a result, the SiO_X/SiN_XO_Y double-layer antireflective coating (ARC) has increased the short circuit current density of single-crystal Si solar cells by about 56% in comparison to bare cells.
- 社団法人応用物理学会の論文
- 1991-05-15
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