Interfacial Layers of High-Barrier Schottky Diode of Al/n-Type (100)Si Exposed to H_2 Plasma
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1993-12-15
著者
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Kuroda Tsukasa
Institute Of Scientific And Industrial Research Osaka University
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Tamaki Shigeru
Graduate School Of Integrated Science Yokohama City University
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Kuroda T
Waseda Univ. Tokyo Jpn
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Tamaki S
Graduate School Of Integrated Science Yokohama City University
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Iwakuro Hiroaki
Research and Development Department, Shindengen Electric Manufacturing Co., Ltd.
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Tamaki Shozo
Osaka Prefectural Industrial Technology Research Institute
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IWAKURO Hiroaki
Shindengen Electric Mfg. Co., Ltd.
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TOKONAMI Masayasu
Faculty of Science, The University of Tokyo
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KITATSUJI Yasuji
Yatsushiro National College of Technology
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Tamaki Shozo
Osaka Prefectural Industrial Research Institute
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Iwakuro H
Shindengen Electric Mfg. Co. Ltd. Saitama Jpn
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Iwakuro Hiroaki
Shindengen Electric Mfg. Co. Ltd.
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Kuroda T
Institute Of Scientific And Industrial Research Osaka University
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Tokonami M
Saitama Inst. Technol. Saitama Jpn
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