Ionization States of Ions Field-Evaporated from the Refractory Metal Alloys

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1977-08-05

著者

• Kuroda Tsukasa

  Institute Of Scientific And Industrial Research Osaka University

• Nakamura Shogo

  Institute Of Scientific And Industrial Research Osaka Univerisity

• Nakamura Shogo

  Institute Of Scientif And Industrial Research Osaka University

関連論文

• Field-Ion Images of Ordered Ni_3Mo Alloy and Their Computer Simulation
• Field-Evaporation End Form of Ordered Ni_4Mo Alloy
• A Method of Determining the Types of Ordered Domains of β-Ni_4Mo in Field-Ion Images
• Field-Ion Microscope Study of Early Stages of Ordering in Ni_4Mo Alloy
• XPS Study on Oxide/GaSb Interfacial Chemical Reaction at Room Temperature
• Enhancement of Surface Plasmon excitation by Low-Energy Electron due to Surface Resonance on Si (001)-2×1
• Characterization of Abrasively Processed Surface of Si(100) Wafer
• Mechanism of Secondary Ion Emission from Silicon Dioxide Bombarded with Argon tons
• Interfacial Layers of High-Barrier Schottky Diode of Al/n-Type (100)Si Exposed to H_2 Plasma
• Simulation of Positive Secondary-Ion Emission from Ar+-(or O2+-) Bombarded Fe-Based Alloys by Local Thermodynamic Equilibrium Model
• ESR and Electric Conductance Studies of the Fine-Powdered SnO_2
• Field Emission from Superconductors
• Mechanisms of Field Ionization and Field Evaporation on Semiconductor Surfaces
• High-Barrier Schottky Diodes on N-Type Si(100) Due to Hydrogen Plasma
• Remolding of Tungsten Field Emitter
• Cohesion of Surface Atoms of Tungsten-Hemispherical Crystal Observed by Field Ion Microscope
• Field-Evaporation of Tungsten in Field Ion Microscope
• Surface Shape Changes of Tungsten Emitter Studied by the Field Ion Microscopy
• The -Oriented Whiskers of β-SiC Studied by the Field Emission and Field Ion Microscopes
• Comparison of Brightness of Field-Ion Image for Different Metals
• Modification of Silicon Dioxide by Hydrogen and Deuterium Plasmas at Room Temperature
• Crystal Structure of TiN Film Fabricated by Reactive Sputtering on Si(100) Substrate
• Observation of Surface Phenomena of Rhenium by F.E.M. and F.I.M.
• Temperature-Dependence of Field Evaporation End Form of Tungsten in Field Ion Microscope
• Determination of the Ionization States of Field Evaporated Atoms with an Atom-Probe-FIM
• Difference of Relative Abundance Ratio of Field Evaporated Ions for Different Faces of the Molybdenum Crystal
• A Field-Ion Microscope for Operation at 4.2 K
• SiC Whisker as a Field Emitter
• Ionization States of Ions Field-Evaporated from the Refractory Metal Alloys
• Direct Observation of the Epitaxial Growth Phenomenon of Cesium on a Tungsten Emitter with a Field Emission Microscope
• Atom Probe Analysis of Random Image Spots Caused by Residual Gas Adsorption
• Field-Ion Microscope Images of Fe-Cu Alloy
• Gas-Surface Interaction in Atom-Probe Field-Ion Microscope
• The Effect of an Electric Field for Surface Migration on Tungsten-Rhenium Alloy in Field-Ion Microscope
• Corrosion of Tungsten Tip by Residual Gas in Field Ion Microscope
• FIM Observation of Interactions between W Atoms on W Surfaces
• A Field Ion Microscope Study of Thin Films of Molybdenum on Tungsten, Iridium and Rhenium
• Temperature and Field Effects on Atomic Arrangements of Clean Tungsten Tip Surfaces Observed by FIM
• An Atomic View of Surface Self-Diffusion on the Tungsten Tip with or without High Fields
• Epitaxial Growth of Molybdenum Films on Cooled Tungsten Tips at 78 K
• Direct Investigation on Interactions between Molybdenum Adatoms on Tungsten Surfaces

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