Difference of Relative Abundance Ratio of Field Evaporated Ions for Different Faces of the Molybdenum Crystal
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1974-10-05
著者
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Kuroda Tsukasa
Institute Of Scientific And Industrial Research Osaka University
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Kuroda Tsukasa
Institute Of Scientific And Industrial Reserch Osaka University
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Nakamura Shogo
Institute Of Scientific And Industrial Research Osaka Univerisity
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KINOSITA Kenji
Institute of Scientific and Industrial Research, Osaka University
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Kinosita Kenji
Institute Of Scientific And Industrial Reserch Osaka University
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Nakamura Shogo
Institute Of Scientific And Industrial Reserch Osaka University
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Nakamura Shogo
Institute Of Scientif And Industrial Research Osaka University
関連論文
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- A Method of Determining the Types of Ordered Domains of β-Ni_4Mo in Field-Ion Images
- Field-Ion Microscope Study of Early Stages of Ordering in Ni_4Mo Alloy
- XPS Study on Oxide/GaSb Interfacial Chemical Reaction at Room Temperature
- Enhancement of Surface Plasmon excitation by Low-Energy Electron due to Surface Resonance on Si (001)-2×1
- Characterization of Abrasively Processed Surface of Si(100) Wafer
- Mechanism of Secondary Ion Emission from Silicon Dioxide Bombarded with Argon tons
- Interfacial Layers of High-Barrier Schottky Diode of Al/n-Type (100)Si Exposed to H_2 Plasma
- Simulation of Positive Secondary-Ion Emission from Ar+-(or O2+-) Bombarded Fe-Based Alloys by Local Thermodynamic Equilibrium Model
- ESR and Electric Conductance Studies of the Fine-Powdered SnO_2
- Field Emission from Superconductors
- Mechanisms of Field Ionization and Field Evaporation on Semiconductor Surfaces
- High-Barrier Schottky Diodes on N-Type Si(100) Due to Hydrogen Plasma
- Remolding of Tungsten Field Emitter
- Cohesion of Surface Atoms of Tungsten-Hemispherical Crystal Observed by Field Ion Microscope
- Field-Evaporation of Tungsten in Field Ion Microscope
- Surface Shape Changes of Tungsten Emitter Studied by the Field Ion Microscopy
- The -Oriented Whiskers of β-SiC Studied by the Field Emission and Field Ion Microscopes
- Comparison of Brightness of Field-Ion Image for Different Metals
- Modification of Silicon Dioxide by Hydrogen and Deuterium Plasmas at Room Temperature
- Crystal Structure of TiN Film Fabricated by Reactive Sputtering on Si(100) Substrate
- Observation of Surface Phenomena of Rhenium by F.E.M. and F.I.M.
- Temperature-Dependence of Field Evaporation End Form of Tungsten in Field Ion Microscope
- Determination of the Ionization States of Field Evaporated Atoms with an Atom-Probe-FIM
- Difference of Relative Abundance Ratio of Field Evaporated Ions for Different Faces of the Molybdenum Crystal
- A Field-Ion Microscope for Operation at 4.2 K
- SiC Whisker as a Field Emitter
- Ionization States of Ions Field-Evaporated from the Refractory Metal Alloys
- Direct Observation of the Epitaxial Growth Phenomenon of Cesium on a Tungsten Emitter with a Field Emission Microscope
- Atom Probe Analysis of Random Image Spots Caused by Residual Gas Adsorption
- Field-Ion Microscope Images of Fe-Cu Alloy
- Gas-Surface Interaction in Atom-Probe Field-Ion Microscope
- The Effect of an Electric Field for Surface Migration on Tungsten-Rhenium Alloy in Field-Ion Microscope
- Corrosion of Tungsten Tip by Residual Gas in Field Ion Microscope
- FIM Observation of Interactions between W Atoms on W Surfaces
- A Field Ion Microscope Study of Thin Films of Molybdenum on Tungsten, Iridium and Rhenium
- Temperature and Field Effects on Atomic Arrangements of Clean Tungsten Tip Surfaces Observed by FIM
- An Atomic View of Surface Self-Diffusion on the Tungsten Tip with or without High Fields
- Epitaxial Growth of Molybdenum Films on Cooled Tungsten Tips at 78 K
- Direct Investigation on Interactions between Molybdenum Adatoms on Tungsten Surfaces