High-Barrier Schottky Diodes on N-Type Si(100) Due to Hydrogen Plasma
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概要
- 論文の詳細を見る
Electrical charcteristics of Al/Si diodes exposed to hydrogen-containing plasmas have been measured. The Schottky barrier heights increase compared with that of a control diode. The Schottky barrier height increases consistently with an increase in an applied rf power or hydrogen concentrationin the plasma. Furthermore, the Si surface exposed to argon or hydrogen plasma has been observed by X-ray photoeletron spectroscopy. It is concluded that exposure of the Si surface to hydrogen plasma produced a hydrogenated amorphous layer in the Si substrate. Therefore, the increased in the Schottky barrier height is attributed to the formation of the Scottky barrier at the interface between the Al metal and the hydrogenated amorphous layer.
- 社団法人応用物理学会の論文
- 1991-02-15
著者
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Kuroda Tsukasa
Institute Of Scientific And Industrial Research Osaka University
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Iwakuro Hiroaki
Institute Of Scientific And Industrial Research Osaka University:(present Address)shindengen Electri
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Inoue Toru
Institute of Scientific and Industrial Research, Osaka University
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Inoue Toru
Institute Of Scientific And Industrial Research Osaka University:osaka Electro-communication Univers
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