Crystal Structure of TiN Film Fabricated by Reactive Sputtering on Si(100) Substrate
スポンサーリンク
概要
- 論文の詳細を見る
The crystal structure of TiN film fabricated on a Si(100) surface by reactive sputtering was studied by means of X-ray diffraction. When the N_2 flow rate was less than 0.058, hexagonal Ti was deposited. The [001] axis of Ti was normal to the substrate face. When the N_2 flow rate was more than 0.091, cubic TiN was deposited. The [111] axis of TiN was normal to the substrate face.
- 社団法人応用物理学会の論文
- 1993-03-15
著者
-
Kuroda Tsukasa
Institute Of Scientific And Industrial Research Osaka University
-
Kuroda T
Waseda Univ. Tokyo Jpn
-
Iwakuro Hiroaki
Research and Development Department, Shindengen Electric Manufacturing Co., Ltd.
-
Iwakuro H
Shindengen Electric Mfg. Co. Ltd. Saitama Jpn
-
Kuroda T
Institute Of Scientific And Industrial Research Osaka University
-
TSUCHIDA Masahiko
Institute of Scientific and Industrial Research, Osaka University
-
SHIMIZU Takashi
Total Technical Supervision Department of Electronic Devices, Shindengen Electric Manufacturing Co.,
-
Tsuchida M
Osaka Univ. Ibaraki Jpn
-
Shimizu Takashi
Total Technical Supervision Department Of Electronic Devices Shindengen Electric Manufacturing Co. L
関連論文
- Characterization of Abrasively Processed Surface of Si(100) Wafer
- Mechanism of Secondary Ion Emission from Silicon Dioxide Bombarded with Argon tons
- Interfacial Layers of High-Barrier Schottky Diode of Al/n-Type (100)Si Exposed to H_2 Plasma
- Simulation of Positive Secondary-Ion Emission from Ar+-(or O2+-) Bombarded Fe-Based Alloys by Local Thermodynamic Equilibrium Model
- Study of Oxidation of TiSi_2 Thin Film by XPS
- Mechanisms of Field Ionization and Field Evaporation on Semiconductor Surfaces
- High-Barrier Schottky Diodes on N-Type Si(100) Due to Hydrogen Plasma
- Remolding of Tungsten Field Emitter
- Cohesion of Surface Atoms of Tungsten-Hemispherical Crystal Observed by Field Ion Microscope
- Field-Evaporation of Tungsten in Field Ion Microscope
- Surface Shape Changes of Tungsten Emitter Studied by the Field Ion Microscopy
- The -Oriented Whiskers of β-SiC Studied by the Field Emission and Field Ion Microscopes
- Comparison of Brightness of Field-Ion Image for Different Metals
- Modification of Silicon Dioxide by Hydrogen and Deuterium Plasmas at Room Temperature
- Crystal Structure of TiN Film Fabricated by Reactive Sputtering on Si(100) Substrate
- Observation of Surface Phenomena of Rhenium by F.E.M. and F.I.M.
- Determination of the Ionization States of Field Evaporated Atoms with an Atom-Probe-FIM
- Difference of Relative Abundance Ratio of Field Evaporated Ions for Different Faces of the Molybdenum Crystal
- A Tip Approach System for a Scanning Tunneling Microscope Using an Inchworm
- Ionization States of Ions Field-Evaporated from the Refractory Metal Alloys
- Direct Observation of the Epitaxial Growth Phenomenon of Cesium on a Tungsten Emitter with a Field Emission Microscope
- Atom Probe Analysis of Random Image Spots Caused by Residual Gas Adsorption
- Field-Ion Microscope Images of Fe-Cu Alloy
- Gas-Surface Interaction in Atom-Probe Field-Ion Microscope