Modification of Silicon Dioxide by Hydrogen and Deuterium Plasmas at Room Temperature
スポンサーリンク
概要
- 論文の詳細を見る
Silicon dioxides exposed to H_2 and D_2 plasmas have been investigated using X-ray photoelectron spectroscopy and secondary ion mass spectrometry. D_2 plasma exposure at the self-bias voltage of 230 V results in reduction of Si on the SiO_2 surface, but not in the H_2 plasma exposure at the same self-bias voltage. This difference between the D_2 and H_2 plasma exposures is attributable to the larger momentum transfer effect of the deuterium ions. The hydrogen or deuterium atoms incorporated diffuse through the SiO_2 film during the plasma exposure and pile up at the Si-SiO_2 interface.
- 社団法人応用物理学会の論文
- 1993-09-01
著者
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Kuroda Tsukasa
Institute Of Scientific And Industrial Research Osaka University
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IWAKURO Hiroaki
Shindengen Electric Mfg. Co., Ltd.
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Iwakuro Hiroaki
Shindengen Electric Mfg. Co. Ltd.
関連論文
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- Mechanism of Secondary Ion Emission from Silicon Dioxide Bombarded with Argon tons
- Interfacial Layers of High-Barrier Schottky Diode of Al/n-Type (100)Si Exposed to H_2 Plasma
- Simulation of Positive Secondary-Ion Emission from Ar+-(or O2+-) Bombarded Fe-Based Alloys by Local Thermodynamic Equilibrium Model
- Mechanisms of Field Ionization and Field Evaporation on Semiconductor Surfaces
- High-Barrier Schottky Diodes on N-Type Si(100) Due to Hydrogen Plasma
- Remolding of Tungsten Field Emitter
- Cohesion of Surface Atoms of Tungsten-Hemispherical Crystal Observed by Field Ion Microscope
- Field-Evaporation of Tungsten in Field Ion Microscope
- Surface Shape Changes of Tungsten Emitter Studied by the Field Ion Microscopy
- The -Oriented Whiskers of β-SiC Studied by the Field Emission and Field Ion Microscopes
- Comparison of Brightness of Field-Ion Image for Different Metals
- Modification of Silicon Dioxide by Hydrogen and Deuterium Plasmas at Room Temperature
- Crystal Structure of TiN Film Fabricated by Reactive Sputtering on Si(100) Substrate
- Observation of Surface Phenomena of Rhenium by F.E.M. and F.I.M.
- Determination of the Ionization States of Field Evaporated Atoms with an Atom-Probe-FIM
- Difference of Relative Abundance Ratio of Field Evaporated Ions for Different Faces of the Molybdenum Crystal
- Ionization States of Ions Field-Evaporated from the Refractory Metal Alloys
- Direct Observation of the Epitaxial Growth Phenomenon of Cesium on a Tungsten Emitter with a Field Emission Microscope
- Atom Probe Analysis of Random Image Spots Caused by Residual Gas Adsorption
- Field-Ion Microscope Images of Fe-Cu Alloy
- Gas-Surface Interaction in Atom-Probe Field-Ion Microscope
- Chemical Etching Failure of SiO_2 Film