Chemical Etching Failure of SiO_2 Film
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概要
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A failure in which a SiO_2 film on a Si wafer was not etched completely in a buffered hydrogen fluoride solution occurred. This etching failure is likely to occur when a photoresist is coated thicker than about 2 μm on the SiO_2 film. Also, etching failure occurred even in broad mask patterns such as 100×1000 μm^2 ones. The etching failure decreased with an increase in the wettability of the photoresist surface. In addition, a buffered hydrogen fluoride solution including surfactants decreased the etching failure. This etching failure is attributed to an air bubble formed at the contact hole when a wafer is immersed into the etching solution.
- 社団法人応用物理学会の論文
- 1996-12-01
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関連論文
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- Modification of Silicon Dioxide by Hydrogen and Deuterium Plasmas at Room Temperature
- Chemical Etching Failure of SiO_2 Film