窒素ガス中の直流チタンアーク放電を用いたプラズマイオン注入による窒化チタン膜コーティング(<特集>プラズマ・表面相互作用)

概要

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In Plasma Based Ion Implantation(PBII)using a titanium arc of DC 70A with a pulse voltage of -10 to -40kV/20μs, titanium nitride(TiN)films were coated on a silicon substrate(p-type, (100))and titanium ions were simultaneously implanted. XPS results indicate that the implanted layer is formed inside the silicon substrate. The thickness of the implanted layer remains constant regardless of the tilt angle of the substrate, whereas deposition thickness varies as the angle is changed. XRD patterns show that the crystal orientation of the film produced by PBII differs from that produced using DC bias. A pulse voltage of -20 to -40kV with a nitrogen pressure of 0.27Pa forms a film of strongly(200)preferred orientation, while a DC bias of -500V(111)and(220)preferred orientation.
社団法人プラズマ・核融合学会の論文
1999-04-25