Photoacoustic Spectra of Semiconductors in the Strong Absorption Region
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概要
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The photoacoustic (PA) spectra in several semiconductors such as Si, Ge,InSb, GaAs, and GaP have been measured in the region of wavelength shorterthan the fundamental absorption edge, where the PA signal is regarded to beindependent or the absorption coefficient. we found the dips in the PA spectrain this region which can be ascribed to the optical reflection effect inherent tothe band structure.
- 社団法人日本物理学会の論文
- 1981-02-15
著者
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TOKUMOTO Madoka
Electrotechnical Laboratory
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Ishiguro Takehiko
Electrotechincal Laboratory
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TOKUKOTO Hiroshi
Electrotechnical Laboratory
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Tokumoto Hiroshi
Electrotechincal Laboratory
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Tokumoto Madoka
Electronics and Photonics Research Institute (EPRI), National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568, Japan
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