Contribution to the Theory of Impurity Band Conduction. II. : Hall Effect
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概要
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In this paper we discuss the Hall coefficient of heavily doped semiconductors at very low temperatures by making use of the general method developed in previous two papers (Matsubara-Toyozawa and the first part of this series). The effect of weak magnetic field on the impurity band conduction is taken into account on the basis of the Kubo formalism and the diagram method. An expression for the Hall coefficient is obtained in terms of the Green's function and it is proved that this expression is reduced in a special case to the usual one derived from the Boltzmann equation method. Some discussion of the general feature of Hall effect in a random system is given.
- 理論物理学刊行会の論文
- 1968-12-25
著者
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MATSUBARA Takeo
Department of Physics, Kyoto University
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Kaneyoshi Takahito
Department Of Physics Kyoto University : Department Of Physics Nagoya University
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Kaneyoshi Takahito
Department Of Natural Science Informatics Of Informatics And Sciences Nagoya University
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Matsubara Takeo
Department Of Applied Physics Okayama University Of Science
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KANEYOSHI Takahito
Department of Physics, Kyoto University : Department of Physics, Nagoya University
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