Theory of Gap States in a-Si and a-Si:H.II.Rigorous Energy Bounds for Hydrogenated Bond States
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概要
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The projection operator method developed in I to discuss the dangling bondstates is used to give a rigorous argument on the energy bounds for the electronicstates of hydrogenated bonds in amorphous silicon. Two types of model fora-Si : H are considered : In the first model, each dangling bond is terminated byconnecting single hydrogen atom (SiH model), and in the second model a brokenbond at random is filled by two hydrogen atoms (SiHHSi model). For bothmodels, it is concluded from analysis of energy bounds that the energy gap isalways increased due to the passivation of dangling bond by hydrogenation.
- 社団法人日本物理学会の論文
- 1984-01-15
著者
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Matsubara Takeo
Department Of Applied Physics Okayama University Of Science
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Sakakura Yoshikazu
Department Of Physics Kyoto University:j.s.p.s.visiting Fellow.on Leave From Colorado School Of Mine
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