Theory of Gap States in a-Si and a-Si:H I.Rigorous Energy Bounds for Dangling Bond States
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概要
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On the basis of Weaire-Thorpe model, a rigorous argument is given on theenergy bounds for the electronic states of dangling bonds in amorphous silicon.Starting with the equation of motion for the amplitude of ICAO wave functionderived from the Weaire-Thorpe Hamiltonian, several inequalities holding amongthe amplitude and model parameters are derived. Based on these inequalities,the energy bounds for the valence band, conduction band and mid gap energyband are determined. An estimate of the gap as function of dangling bond con-centratuon IS guven.
- 社団法人日本物理学会の論文
- 1984-01-15
著者
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Matsubara Takeo
Department Of Applied Physics Okayama University Of Science
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SAKAKURA Yoshikazu
Department of Physics,Kyoto University
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Sakakura Yoshikazu
Department Of Physics Kyoto University:j.s.p.s.visiting Fellow.on Leave From Colorado School Of Mine
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Sakakura Yoshikazu
Department Of Physics Kyoto University:j.s.p.s.visiting Fellow.on Leave From Colorado School Of Mine
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