A Simple Modil of Hydrogenation in Tetrahedrally Bonded Disordered Semiconductors
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概要
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Coherent potential approximation (CPA) is applied to evaluate the total density ofstates (DOS) and local density of states (LDS) for hydrogenated amorphous silicon (a-Si:H). Three configurations Sill, SiHHSi and SiHSi are considered for the silicon-hydrogen bonding states. Instead of calculating the electronic states of a-Si: H, the effectof hydrogenation is renormalized into an effective Si' -Si' bond so that the problemmay be reduced to that of a-Si' with random effective bonds. The calculated Si'-LDSand DOS for three configurations are compared with other theory and experiments.
- 社団法人日本物理学会の論文
- 1982-02-15
著者
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Hama Toshio
Department Of Physics Kyoto University
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Matsubara Takeo
Department Of Applied Physics Okayama University Of Science
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