GaP基板上へのIn_1_-_xGa_xPの液相エピタキシャル成長

概要

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Homogeneous In_<1-x>Ga_xP single crystals have been grown on GaP (111) substrates by the constant temperature liquid phase epitaxial growth technique under controlled phosphorus vapor pressure in an open tube. In this growth technique, the crystal with desired alloy composition x can easily be grown by the proper selection of phosphorus temperature. The homogeneity in composition of grown crystal is investigated by X-ray microanalysis. Crystals with the composition x≳0.9 are completely homogeneous, and the surface morphology is smooth and reflective. For x≲0.9,the fluctuations of alloy composition, ⊿x, are within ±0.02,and the surfaces are rough and many triangular hillocks are observed. These differences in the surface morphology are presumably attributed to the lattice mismatch between GaP substrate and the grown layer.
山梨大学の論文