均一な組成をもつIn_1_-_xGa_xP単結晶

概要

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Under the equilibrium conditions of vapor-liquid-soild in the two-zone furnace, homogeneous In_<1-x>Ga_xP single crystals are synthesized. By controlling the temprature of phosphorus, the lowest temperature in the quartz ampoule, In_<1-x>Ga_xP single crystals of various compositions which we hope can be grown. When the temperature of In-Ga-P solution is set at 930℃, 970℃ and 1,000℃, the temperature of phosphrous should be set at about 390℃, 405℃ and 430℃ respectively for the purpose of acquiring the crystals having desirable compositions for LED. From the optical transmission experiments and emission spectra, the relation between the energy gap and the crystal composition has been obtained. These results indicate that the crossover between the direct and indirect conduction band minima occurs at the composition x=0.70∿0.75.
山梨大学の論文