拡散形GaAsスイッチダイオード

概要

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Switching diode used in the logic circuits of computer is requiered to have a shorter switching time. It is favourable for the diode to use materials having a short minority carrier lifetime as possible, because the switching time is comparable to the lifetime. The carrier lifetime of GaAs being so short as 10^<-9>∿10^<-13>/sec, GaAs is regarded as a suitable material for the switching diode. According to the experiments, the diodes being made of n type GaAs of impurity concentration 2.7×10^<17>/cm^3 proved that the switching time is in proportion to the junction capacitance and the former falls to about 2 nsec in case of 1pF of the latter. As the result of the measurement of UHF impedance and storage time in the current response for switching characteristics of the diodes, it is proved that the minority carrier lifetime of the material is 2∿3 nsec. This fact is followed that the switching time obtained from GaAs diode is about 2 nsec or so.
山梨大学の論文
1968-12-20