銅をドープしたゲルマニウムエサキダイオードの過剰電流

概要

論文の詳細を見る
The copper-doped Esaki diode is investigated to study the origin of the excess currents, because the excess current depends on the deep impurity levels in forbidden band and the copper has such levels in germanium. In the measurement of current-voltage characteristics, there are remarkable difference between normal Esaki diode and copper-doped Esaki diode. That is, both I_p/I_v and V_s of the latter are smaller than that of the former. The onset voltage at which excess currents begin to flow through the deep impurity levels of copper is 220∿260mV, which is obtained by measurement of differential conductance. These values agree with theoretical volue 230mV. It is shown by the measurement of temperature dependency of the current near 230mV, that this current is not diffusion currents but excess currents.
山梨大学の論文
1968-12-20