GaAsダイオードの構造とレーザー発光特性の関係

概要

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A great deal of work has been done in the field of injection laser since 1962. However, there are only a few report on the dependence of the characteristics on the structure of the laser diode. The purpose of this paper is to present the effects of cleavaged surface of Fabry-Perot resonator, and of flatness of PN junction, etc. on laser characteristics. The results obtained are follows : (i) The threshold current of stimulated emission dicreases as the impurity concentration of diode increases. (ii) Diffusing Zn deeper than 20μ under excess vapour pressure of As, flat and fine junction is obtained. (iii) It is necessary for laser diode to have the ohmic contact with resistance less than 3Ω. (iv) If the distance between cleavaged mirror surfaces of Fabry-Perot resonator is different locally, laser action occurs at the longest part of the resonator.
山梨大学の論文