超階段接合におけるツェナ降伏電圧

概要

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The impurity concentration of hyper-abrupt junction decreases with the distance from the pn boundary. The breakdown voltage depends on the distribution of impurity concentration, which is very high in p region and varies according to N_0exp(-x/L_e)+N_b in n region. Assuming that Zener breakdown occurs when the maximum field in the depletion layer reaches to a constant value, which is 3×10^5V/cm for germanium and 1.4×10^6V/cm for silicon, the breakdown voltage of germanium and silicon hyper-abrupt diode is evaluated numerically by the computer. The results are obtained that Zener breakdown voltage decreases very sharply at N_0L_e≒(2.0∿2.5)×10^<12>cm^<-2> for germanium and at N_0L_e≒(6∿8)×10^<12>cm^<-2> for silicon, and coincide well with the experimental results. When the avalanche breakdown occurs, however, the experimental value of the breakdown voltage is smaller than the theoretical value.
山梨大学の論文
1968-12-20