導波管減衰器用抵抗板
スポンサーリンク
概要
- 論文の詳細を見る
The carbon-and metal-film on a dielectric base are widely used as resistive strip for waveguide attenuators. It is required as a resistive strip that there are not any resistance change of strip with time. Some papers for temperature and humidity tests were reported in the past, but there are no reports for aging test which carried out for several years. In this paper, in order to determine the relative merits of certain materials used as microwave attenuators, many materials and depositing methods were tried, and resistance change with the condition of the atmosphere were observed for three years. Then it is tried to improve the stability of resistive sheet, and is also obtained data to design attenuators. When the observations are extend for several years, there are phenomena which are considerably different from former temperature and humidity tests which were measured for short duration. For most attenuator applications, the film thickness is less than the depth of current penetration even at the highest microwave frequency. Because of thickness of the film, it has been treated that the resistive film acts like a pure conductance. But, it is found by experiments that the carbon film has considerable capacitive susceptance, on the other hand metal film can be regarded as pure conductance. In this paper, variations of the effective admittance of the resistive film with d-c resistance, thickness of film and frequency are discussed, and are obtained the practical data for microwave admittance which is needed for the design problems of attenuators.
- 山梨大学の論文
- 1961-12-20
著者
関連論文
- GaP基板上へのIn_1_-_xGa_xPの液相エピタキシャル成長
- ZnS, ZnSe, ZnTeの気相エピタキシャル成長 : II-VI化合物半導体
- AlをドープしたZnSのホトルミネセンス
- ドリフトダイオードのスイッチ特性
- シリコン超階段接合の降伏電圧の実験的検討
- 均一な組成をもつIn_1_-_xGa_xP単結晶
- 徐冷法によるIn_1-_x_Ga_xP単結晶の成長
- ダイオードのスイッチ特性に及ぼすドリフト電界の効果(補遺)
- 二重拡散法によるシリコン超階段接合ダイオード
- ダイオードのスイッチ特性に及ぼすドリフト電界の効果
- GaAsダイオードの構造とレーザー発光特性の関係
- X線トポグラフィによるSiおよびGaAsの転位の観測
- 拡散形GaAsスイッチダイオード
- 銅をドープしたゲルマニウムエサキダイオードの過剰電流
- 超階段接合におけるツェナ降伏電圧
- エサキダイオードの静特性直視装置
- 超階段形接合可変容量ダイオードの耐圧
- 空胴共振器法によるプラズマ電子密度の測定
- 放電プラズマの電子密度測定
- 導波管減衰器用抵抗板
- 導波管抵抗減衰器における抵抗板と管上下壁間に存在するギャップの影響
- 放電プラズマの電子密度測定に関する補正
- Metalized-Glass の作成およびその抵抗値の安定化について