ダイオードのスイッチ特性に及ぼすドリフト電界の効果

概要

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When a PN junction diode is used as switching devices, a minority-carrier storage affects to the switching characteristics. If storage carriers could remove quickly, the switching characteristics of a diode may be improved. For the purpose of removing them, for example, there is a method of doping Au into a silicon diode. It is an another method to make the carrier-drift electric field in a diode. In this paper, effects of the drift field on the switching characteristics of a diode are inverstigated theoretically. Solving the diffusion equation taking accunt of the drift field, formulas are obtained for the carrier density distribution, the storage time, the reverse recovery time and the reverse transient current. And they are calculated numerically with the aid of computer. As the result, effects of the drift field on the switching characteristics of a diode are obtained quantitatively. Concretely, the recovery time shortens about 40% and the transient current decreases about 20% because of the drift field. It means a minority-carrier storage diminishes substantially.
山梨大学の論文