AlをドープしたZnSのホトルミネセンス

概要

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Photoluminescence (PL) properties of ZnS crystals doped with various amounts of Al impurity are studied. Crystals of undoped ZnS, grown by vapor-phase transport in nitrogen atmosphere, are fired in molten mixtures of Zn and 0.04∿1.5atom% Al at 900℃ for 48h, and then quenched in water. The concentrations of the Al doped in ZnS crystals are measured by using an EPMA, and found to be 0.01∿1atom%, that is, 5×10^<18>∿5×10^<20>cm^<-3>. The peak energies of the PL spectra of the samples excited by the 365nm line of an Hg lamp become higher as the temperature is increased, when the Al concentrations are lower than 0.2atom%. The PL peak energies of the samples of the Al concentrations higher than 0.2atom% become lower as the temperature is increased. These facts show that the luminescence in the samples with [Al]<0.2atom% is SA emission-like, and that the luminescence in the samples with [Al]>0.2atom% is DA pair emission-like. The thermal quenching energy of the DA pair-like emission increases from 0.01 to 0.1eV as the Al concentration increases from 0.2 to 1.0atom%. The time-resolved luminescence spectra and the total light decay curves of the Al doped samples excited by an N_2 laser show the DA pair emission-like characteristics for the Al concentrations between 0.06∿1.2atom%, and no distinct dependence on the Al concentration is observed.
山梨大学の論文