ZnSe系ヘテロエピタキシャル結晶の格子歪と界面特性(<特集>バルク結晶の成長(II))

概要

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ZnSe-based heteroepitaxial crystals are grown on III-V substrates, mainly on GaAs, because II-VI wafers with high quality and large area are hardly obtained. The heteroepitaxial crystals include two-dimensional elastic strains due to mismatches of lattice constant and thermal expansion coefficient. The strains in ZnSe layers on GaAs substrate measured with X-ray diffraction are described as a function of temperature for different layer thicknesses. The stress at the heterointerface is also estimated from energy shift of Cr^<2+> luminescence in GaAs substrate. The two-dimensional strain changes symmetry of the crystal lattice and energy band structure. The band structure of strained layers are studied by low-temperature reflectance spectra. The electrical properties of ZnSe/GaAs hetero-interface and influences of substrate-surface treatment are also discussed.
日本結晶成長学会の論文
1995-03-25