ドリフトダイオードのスイッチ特性

概要

論文の詳細を見る
The hyper-abrupt junction has the impurity concentration decreases with increase of distance from the P-N boundary. In case the impurity concentration in the base region of the diode is nonuniform, built-in electric field is produced in the base region. As the injected carriers are swept out from the base layer in the graded base diodes, they are applicable to the very-high-speed switching devices. When the switching characteristics are analized by solving the diffusion equation of minority carrier, the electric field does not include in the diffusion equation, but include in the boundary conditions at the junction, because this field in the base exists only part near the junction. A theoretical result has been obtained that the electric field makes the storage time of the hyper-abrupt junction diode shorter than that of the step junction diode, and the experimental values agree qualitatively with the theoretical result.
山梨大学の論文