ダイオードのスイッチ特性に及ぼすドリフト電界の効果(補遺)

概要

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The minority-carrier storage effect of the diode may be reduced by the built-in electric field, and therefore the switching time may be shortened. In our previous paper, the effects of the drift electric field on the switching characteristics of the diode were analized theoretically and evaluated numerically. However, the effects of the drift field on the switching characteristics were not shown clearly, since the results were repersented by normalizing the time and the distance by τ_δ and L_δ respectively, which are both the functions of the built-in field. In this paper, therefore, the results are revised by normalizing the time and the distance by the carrier lifetime τ_p and the diffusion length L_p respectively. It becomes evident that the storage time, the fall time and the reverse recovery time are shortened extremely by the drift field.
山梨大学の論文