シリコン超階段接合の降伏電圧の実験的検討

概要

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The hyper-abrupt junction has the impurity distribution in which the concentration decreases with the distance from the P-N boundary. This junction is used in the devices such as hyper-abrupt varactor diode, Read diode, drift transistor and monolithic integrated circuit. It is necessary, for the designer of these devices, to make clear the relation between the impurity distribution and the breakdown voltage of this junction. For this reason, the authors have reported the breakdown voltages of the germanium hyper-abrupt junction. In this paper, the silicon hyper-abrupt junction is fabricated by planer techniques, and the relation between the breakdown voltage and the impurity distribution of this junction is obtained experimentally, and the experimental values are coincided qualitatively with the theoretical results which have been reported by the authors.
山梨大学の論文