Impact of Resist Shrinkage and Its Correction in Nanoimprint Lithography
スポンサーリンク
概要
- 論文の詳細を見る
Relative critical dimension (CD) errors in nanoimprint lithography are estimated by numerical simulation for various pattern sizes. From the results, transfer functions to estimate the CD errors are proposed, which are expressed similarly to a low- or high-pass filter in terms of the spatial frequency. Using the transfer functions, the mold pattern sizes are corrected to compensate the shrinkage.
- 2012-06-25
著者
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Okada Makoto
Graduate School Of Science Laboratory Of Advanced Science And Technology For Industry (lasti) Univer
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Matsui Shinji
Graduate School Of Science And Laboratory Of Advanced Science And Technology For Industry Himeji Ins
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Hirai Yoshihiko
Physics And Electronics Engineering Osaka Prefecture University
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Horiba Akira
Physics and Electronics Engineering, Graduate School of Engineering, Osaka Prefecture University, Sakai 599-8531, Japan
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Yasuda Masaaki
Physics and Electronics Engineering, Graduate School of Engineering, Osaka Prefecture University, Sakai 599-8531, Japan
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Kawata Hiroaki
Physics and Electronics Engineering, Graduate School of Engineering, Osaka Prefecture University, Sakai 599-8531, Japan
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