Fabrication of Imprint Mold with Nanotrench Patterns by Edge Lithography

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概要

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• SiO2 nanoline with extremely high aspect ratio could be fabricated by the edge lithography, however, such a high aspect nanoline was fragile. Since nanotrench pattern was stronger than nanoline pattern, a new process was developed for obtaining the Si nanotrench from the SiO2 nanoline in order to obtain a strong nanoimprint mold. A resist nanotrench pattern is fabricated by using only the resist coating and the resist etching. The process is much simpler than the lift-off process. The Si wafer is etched by the modified Bosch process. The fabricated Si trench width and depth are 35nm and 260nm, respectively. The Si trench pattern is replicated to polystyrene (PS) film on a silicon wafer by thermal nanoimprint lithography. The PS nanoline, whose width and height are 28 nm and 360 nm, is successfully fabricated.

著者

• Hirai Yoshihiko

  Physics And Electronics Engineering Osaka Prefecture University

• Yasuda Masaaki

  Physics and Electronics Engineering, Graduate School of Engineering, Osaka Prefecture University, Sakai 599-8531, Japan

• Kawata Hiroaki

  Physics and Electronics Engineering, Graduate School of Engineering, Osaka Prefecture University, Sakai 599-8531, Japan

• Kawata Hiroaki

  Physics and Electronics, Graduate School of Engineering, Osaka Prefecture University

• Noma Hayato

  Physics and Electronics, Graduate School of Engineering, Osaka Prefecture University

関連論文

• Fabrication of 3-dimensional structure by nanoimprint process
• Impact of Resist Shrinkage and Its Correction in Nanoimprint Lithography
• Numerical and Experimental Analysis of Intermittent Line-and-Space Patterns in Thermal Nanoimprint
• Novel Heterostructured Organic Photovoltaics Formed by Multilayered Direct Nanoimprinting
• Evaluation of Demolding Energy for Various Demolding Modes in Embossing Process
• Fabrication of Imprint Mold with Nanotrench Patterns by Edge Lithography

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