Modeling of Feature Profile Evolution in SiO2 as functions of Radial Position and Bias Voltage under Competition among Charging, Deposition, and Etching in Two-Frequency Capacitively Coupled Plasma
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概要
- 論文の詳細を見る
A feature profile evolution model of a trench in SiO2 is developed in a two-frequency capacitively coupled plasma in CF4(5%)/Ar by considering two layers, a mixing layer and an overlaying polymer layer on the basis of a database of etching yield by extending our original physical computer-aided design (CAD) tool, VicAddress (vertically integrated computer-aided design for device processes). That is, the surface exposed to fluorocarbon plasma is considered under competition among the charging of electrons and ions, the deposition of radicals, and reactive etching by ions. The feature profile is also discussed in terms of the bias amplitude and the position on the wafer.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2006-11-15
著者
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Makabe Toshiaki
Department Of Electrical Engineering Faculty Of Science And Technology Keio University
-
Yagisawa Takashi
Department Of Electronics And Electrical Engineering Keio University
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Shimada Takashi
Department Of Applied Physics School Of Engineering The University Of Tokyo
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Makabe Toshiaki
Department of Electronics and Electrical Engineering, Keio University, 3-14-1 Hiyoshi, Kohoku-ku, Yokohama 223-8522, Japan
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Shimada Takashi
Department of Electronics and Electrical Engineering, Keio University, 3-14-1 Hiyoshi, Kohoku-ku, Yokohama 223-8522, Japan
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