The Radical Transport in the Narrow-Gap-Reactive-Ion Etcher in SF_6 by the Relaxation Continuum Model
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概要
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We have established a selfconsistent modeling of a narrow-gap reactive ion etcher (N-gap-RIE) with parallel-plate geometry in SF_6. Using the discharge structure of the relaxation continuum model, we have numerically predicted the radical transport to the surface of N-gap-RIE in SF_6 under two different surface reactions. The spatiotemporal profiles of radicals and neutrals are demonstrated for a long time scale (0-1 s) at between 0.05 Torr and 1.0 Torr at 13.56 MHz. The estimated etch rate of Si wafer with F radicals agrees reasonably well with the previous experimental value obtained under a low-power condition. It is stressed from the present result that the ion-molecule reactions for the generation of F radicals as well as the electron impact dissociation of SF_6 are of great importance.
- 社団法人応用物理学会の論文
- 1994-04-30
著者
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Petrovic Z
Keio Univ. Yokohama Jpn
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Nakano Nobuhiko
Department Of Electrical Engineering Faculty Of Science And Technology Keio University
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Nakano Nobuhiko
Faculty Of Science And Technology Department Of Electrical Engineering Keio University
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PETROVIC Zoran
Institute of Physics, University of Belgrade
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MAKABE Toshiaki
Department of Electrical Engineering, Keio University
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Makabe T
Keio Univ. Yokohama Jpn
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Makabe Toshiaki
Department Of Electrical Engineering Faculty Of Science And Technology Keio University
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Petrovic Zoran
Institute Of Physics
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