RF マグネトロンスパッタリング法によるBaTiO3 薄膜の低温堆積と評価

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We deposited BaTiO3 (BTO) thin films on Pt/Ti/SiO2 substrates at the substrate temperatures (Tsub) of 300 and 500℃ in RF magnetron sputtering method, changing sputtering gas flow ratios of oxygen to total gas (R[O2]) and the distances between substrates and targets (dT-S). From the results, we found that the (001)-oriented BTO films were obtained at the low Tsub of 300℃ using the dT-S of 30 mm. The orientation of the BTO films deposited at 300℃ are dependent on the dT-S from 30 mm to 50 mm. The deposition rates of the BTO films at the dT-S of 30 mm were larger than those at 40 and 50 mm. Electrical resistance perpendicular to the substrate in the film deposited at 500℃ was higher than that at 300℃. The Pr and Ec of the film at 500℃ were estimated to be 3.4 μC/cm2 and 63.5 kV/cm, respectively. (001)-oriented BTO films crystallized at low Tsub of 300℃ is obtained by short dT-S, since the short dT-S may supply more materials to the substrates in the plasma where there are many active particles of constituent elements in BTO.
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