HWE法成長PbTe-Pb1-xSnxTe超格子のバンド間光吸収

概要

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Using the hot wall epitaxy technique, PbTe-Pb1-xSnxTe superlattices were grown on the base layers of epitaxial PbTe with about 100μm thickness and these superlattices were grown on BaF2 substrates cleaved along (111) surface in air. The infrared transmittances of PbTe-Pb1-xSnxTe superlattices were measured at 150 K and 77 K. These transmittance properties have indicated the optical transitions of electrons from valence band to cond uction band of which structure were composed of the periodic quantum wells consisting of the superlattice potential. Comparing the quantum level observed by these experiments with the theoretical value calculated by Kronig-Penney model, the splitting of quantized motion of electrons or holes with light and heavy masses are observed. In these analysis, we have get the best coincidence between experimental and theoretical results by assuming that the central levels of forbidden gaps of PbTe are almost equal to that of Pb0.8Sn0.2Te.
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