A31 Focused ion beam machining of silicon carbide(M4 processes and micro-manufacturing for science)
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概要
- 論文の詳細を見る
Focused ion beam can remove hard materials such as diamond, sapphire, and silicon carbide (SiC). SiC is very useful for glass molding because of high temperature toughness and high hardness, however, fine patterning of SiC is very difficult. Therefore, ion beam machining properties of SiC were investigated and 3D fabrication of SiC using dwell time machining method was also carried out. The machining properties, submicron patterns and 3D patterns of SiC were obtained.
- 2009-12-01
著者
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TANIGUCHI Jun
Department of Applied Electronics, Tokyo University of Science
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KOGO Yasuo
Department of Material Science and Technology, Faculty of Industrial Science and Technology, Tokyo U
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Kogo Y
Department Of Materials Science And Technology Tokyo University Of Science
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Kogo Yasuo
Department Of Material Science And Engineering Science University Of Tokyo
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Taniguchi Jun
Department Of Applied Electronics Tokyo University Of Science
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SATAKE Shin-ichi
Department of Applied Electronics, Tokyo University of Science
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Taniguchi J
Department Of Applied Electronics Tokyo University Of Science
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OKUMOTO Takashi
Department of Applied Electronics, Tokyo University of Science
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SAWAI Kousuke
Department of Applied Electronics, Tokyo University of Science
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OOSUMI Takaki
Department of Applied Electronics, Tokyo University of Science
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YAMASHINA Shun
Department of Applied Electronics, Tokyo University of Science
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Sawai Kousuke
Department Of Applied Electronics Tokyo University Of Science
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Yamashina Shun
Department Of Applied Electronics Tokyo University Of Science
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Okumoto Takashi
Department Of Applied Electronics Tokyo University Of Science
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Satake Shin-ichi
Department Of Applied Electronics Tokyo University Of Science
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