A30 Strain field in Si mold on UV-nanoimprint lithography(M4 processes and micro-manufacturing for science)
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概要
- 論文の詳細を見る
UV-nanoimprint lithography (NIL) is high throughput nano-order replication process; thus, this process is promising for next generation lithography and patterned media and so on. But, lifetime or strain of UV-NIL mold has not been studied yet. Therefore, repeatedly UV-NIL were carried out, strain field of Si mold after UV-NIL were observed by Raman mapping image. As the results, UV-NIL causes almost zero strain in the mold.
- 一般社団法人日本機械学会の論文
- 2009-12-01
著者
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MORIHIRA Yasushi
Tokyo Instruments, Inc.
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Taniguchi Jun
Department Of Applied Electronics Tokyo University Of Science
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Morihira Yasushi
Tokyo Instruments Inc.
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OSARI Kazutomo
Department of Applied Electronics, Tokyo University of Science
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Osari Kazutomo
Department Of Applied Electronics Tokyo University Of Science
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