Si基板上CaS:Cu,F薄膜EL素子の発光特性

概要

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CaS:Cu,F thin-films have been prepared with the aim of development a blue-emitting thin-film electroluminescence (TFEL) device with high luminance and good chromaticity. The dependence of structural and photoluminescent (PL) properties of CaS:Cu,F thin-films prepared by electron beam on annealing temperature and time after the deposition was investigated. Crystallinity and PL intensity of the films were improved significantly by annealing at temperatures higher than 800℃ for up to 10min. The improvement showed a tendency toward saturation for annealing at longer than 10min. The above results indicate that annealing for around 10min is suitable. The CaS:Cu,F TFEL device was fabricated on an Si substrate using SiO_2 and Y_2O_3 films as insulator layers, and ZnS films as buffer layers. The device annealed at 850℃ for 10min with 0.3 at% of CU^+ was obtained a blue emission with an obvious peak of 425nm, CIE coordinates of x=0.217, y=0.223.
社団法人映像情報メディア学会の論文
2005-07-01