Electric Field Effect on the Al-MgO-YBa_2Cu_3O_y Structure
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概要
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The electric field effect on YBa_2Cu_3O_y was investigated at room temperature by using the Al-MgO-(001)YBa_2Cu_3O_y metal-insulator-superconductor (MIS) structure. Special care was taken for preparation of a good interface: heteroepitaxial growth technology was employed for MgO-YBa_2Cu_3O_y successive growth. A typical MIS capacitance-voltage (C-V) curve was obtained under the condition of the reduced carrier concentration, suggesting that the existing band diagram could be applicable to YBa_2Cu_3O_y as well as to semiconductors.
- 社団法人応用物理学会の論文
- 1990-01-20
著者
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Kabasawa Uki
Faculty Of Engineering Science Osaka University
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KOBAYASHI Takeshi
Faculty of Engineering Science, Osaka University
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ASANO Kiyomitsu
KEK, National Laboratory for High Energy Physics
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Asano K
Kek National Laboratory For High Energy Physics
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ASANO Katsunori
Faculty of Engineering Science, Osaka University
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Kobayashi Takeshi
Faculty Of Engineering Science Department Of Electrical Engineering Osaka University
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