Epitaxial NbN/MgO/Si(GaAs,InP) Tunneling MIS Schottky Diode Fabricated by Interrupted-Sputtering Method
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概要
- 論文の詳細を見る
Epitaxial NbN/MgO/Si(GaAs or Ink) MIS structures were prepared by the sputtering technique. Introduction of the interrupted-sputtering method facilitated the growth of epitaxial NbN/MgO/Si heterostructures for almost one monolayer MgO layer. GaAs and InP substrates, however, never fostered epitaxial overgrowth of NbN until the MgO layer became thicker than 3 nm. Diodes fabricated from these wafers exhibited good tunneling MIS Schottky characteristics.
- 社団法人応用物理学会の論文
- 1987-01-20
著者
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Yamashita Tsutomu
Recearch Institute Of Electrical Communication Tohoku University
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KOBAYASHI Takeshi
Faculty of Engineering Science, Osaka University
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SAKAGUCHI Yoshiyuki
Faculty of Engineering Science, Osaka University
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TONOUCHI Masayoshi
Faculty of Engineering Science, Osaka University
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Yamashita Tsutomu
Faculty Of Engineering Nagasaki University
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Sakaguchi Y
Graduate School Of Information Systems The University Of Electro-communications
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Sakaguchi Yoshiyuki
Faculty Of Engineering Science Osaka University
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Kobayashi Takeshi
Faculty Of Engineering Science Department Of Electrical Engineering Osaka University
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