Field-Induced Surface Carrier Density in Pt/SrTiO_3/p-Si Metal-Insulator-Semiconductor Structure in Excess of 3×10^<13>cm^<-2>
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概要
- 論文の詳細を見る
Highly polarisable (100)SrTiO_3 (STO) epitaxial films with permittivity of 313ε_0 were grown on (111)Pt/(100)MgO substrates by reactive rf magnetron sputtering. By contacting a p-Si tip onto the STO surface and using a Pt underlying layer as the base electrode, inverted metal-insulator-semiconductor (MIS) structures were prepared. The field-induced surface carrier density in Si reached as high as 3.5×10^<13> for 8 V applied voltage, being 〜50 times higher than that of the metal/SiO_2/Si MOS diode. On the other hand, when STO was directly grown on the Si substrate, field-effect modulation in an ordirtary MIS diode was significantly degraded due to the deteriorated interface.
- 社団法人応用物理学会の論文
- 1994-03-15
著者
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KOBAYASHI Takeshi
Faculty of Engineering Science, Osaka University
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Taga Masahiro
Nippon Seisen Co. Ltd.
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Taga Masahiro
Faculty Of Engineering Science Osaka University
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Taga M
Faculty Of Engineering Science Osaka University
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Kobayashi Takeshi
Faculty Of Engineering Science Department Of Electrical Engineering Osaka University
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